The 100 W class A power amplifier for L-band T/R module

Authors

  • Wojciech Wojtasiak
  • Daniel Gryglewski
  • Edward Sędek

DOI:

https://doi.org/10.26636/jtit.2002.1.102

Keywords:

modeling, MESFETs, finite difference time domain method, power transistors, microwave transistors

Abstract

In the paper a balanced high power amplifier with class A silicon bipolar transistors for L-band T/R module is described. The amplifier was designed for maximum power and minimum transmitance distortions. The obtained parameters of the amplifier are as follow: output power at 1 dB compression P1 dB > 49 dBm, linear gain |S21| > 10 dB, and transmitance deviations during the RF pulse: phase arg(S21)<0.90 and Pout<0.2 dB.

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Published

2002-03-30

Issue

Section

ARTICLES FROM THIS ISSUE

How to Cite

[1]
W. Wojtasiak, D. Gryglewski, and E. Sędek, “The 100 W class A power amplifier for L-band T/R module”, JTIT, vol. 7, no. 1, pp. 11–13, Mar. 2002, doi: 10.26636/jtit.2002.1.102.