The 100 W class A power amplifier for L-band T/R module
DOI:
https://doi.org/10.26636/jtit.2002.1.102Keywords:
modeling, MESFETs, finite difference time domain method, power transistors, microwave transistorsAbstract
In the paper a balanced high power amplifier with class A silicon bipolar transistors for L-band T/R module is described. The amplifier was designed for maximum power and minimum transmitance distortions. The obtained parameters of the amplifier are as follow: output power at 1 dB compression P1 dB > 49 dBm, linear gain |S21| > 10 dB, and transmitance deviations during the RF pulse: phase arg(S21)<0.90 and Pout<0.2 dB.
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Copyright (c) 2002 Journal of Telecommunications and Information Technology
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