Kalisz, Małgorzata, Grzegorz Głuszko, and Romuald B. Beck. “The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma”. Journal of Telecommunications and Information Technology 39, no. 1 (March 30, 2010): 25–28. Accessed December 12, 2024. https://jtit.pl/jtit/article/view/1059.