[1]
F. Zaunert, R. Endres, Y. Stefanov, and U. Schwalke, “Evaluation of MOSFETs with crystalline high-k gate-dielectrics: device simulation and experimental data”, JTIT, vol. 28, no. 2, pp. 78–85, Jun. 2007, doi: 10.26636/jtit.2007.2.812.