[1]
T. Janik, B. Majkusiak, and M. Korwin-Pawłowski, “Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectrics”, JTIT, vol. 3, no. 1, pp. 65–69, Mar. 2001, doi: 10.26636/jtit.2001.1.38.