[1]
J. Szmidt, A. Werbowy, E. Dusiński, and K. Zdunek, “Reliability of MIS transistors with plasma deposited Al2O3 gate dielectric film”, JTIT, vol. 3, no. 1, pp. 70–75, Mar. 2001, doi: 10.26636/jtit.2001.1.37.