Kalisz, Małgorzata, Grzegorz Głuszko, and Romuald B. Beck. 2010. “The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma”. Journal of Telecommunications and Information Technology 39 (1): 25-28. https://doi.org/10.26636/jtit.2010.1.1059.