KALISZ, Małgorzata; GŁUSZKO, Grzegorz; BECK, Romuald B. The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma. Journal of Telecommunications and Information Technology, [S. l.], v. 39, n. 1, p. 25–28, 2010. DOI: 10.26636/jtit.2010.1.1059. Disponível em: https://jtit.pl/jtit/article/view/1059. Acesso em: 12 dec. 2024.