ZARĘBA, Agnieszka; ŁUKASIAK, Lidia; JAKUBOWSKI, Andrzej. Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base. Journal of Telecommunications and Information Technology, Warsaw, Poland, v. 29, n. 3, p. 88–92, 2007. DOI: 10.26636/jtit.2007.3.836. Disponível em: https://jtit.pl/jtit/article/view/836. Acesso em: 13 jun. 2026.