MROCZYŃSKI, Robert; BIENIEK, Tomasz; B. BECK, Romuald; ĆWIL, Michał; KONARSKI, Piotr; HOFFMANN, Patrick; SCHMEISSER, Dieter. Comparison of composition of ultra-thin silicon oxynitride layers’ fabricated by PECVD and ultrashallow rf plasma ion implantation. Journal of Telecommunications and Information Technology, [S. l.], v. 29, n. 3, p. 20–24, 2007. DOI: 10.26636/jtit.2007.3.822. Disponível em: https://jtit.pl/jtit/article/view/822. Acesso em: 20 apr. 2026.