ØSTHAUG, Jarle; FJELDLY, Tor A.; INIGUEZ, Benjamin. Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime. Journal of Telecommunications and Information Technology, Warsaw, Poland, v. 15, n. 1, p. 70–79, 2004. DOI: 10.26636/jtit.2004.1.227. Disponível em: https://jtit.pl/jtit/article/view/227. Acesso em: 9 sep. 2026.