Kalisz, M. et al. 2010. The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma. Journal of Telecommunications and Information Technology. 39, 1 (Mar. 2010), 25–28. DOI:https://doi.org/10.26636/jtit.2010.1.1059.